JPH035071B2 - - Google Patents
Info
- Publication number
- JPH035071B2 JPH035071B2 JP21835686A JP21835686A JPH035071B2 JP H035071 B2 JPH035071 B2 JP H035071B2 JP 21835686 A JP21835686 A JP 21835686A JP 21835686 A JP21835686 A JP 21835686A JP H035071 B2 JPH035071 B2 JP H035071B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity concentration
- capacitance
- region
- surge
- concentration region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000002457 bidirectional effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21835686A JPS6373673A (ja) | 1986-09-17 | 1986-09-17 | サ−ジ吸収用半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21835686A JPS6373673A (ja) | 1986-09-17 | 1986-09-17 | サ−ジ吸収用半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6373673A JPS6373673A (ja) | 1988-04-04 |
| JPH035071B2 true JPH035071B2 (en]) | 1991-01-24 |
Family
ID=16718598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21835686A Granted JPS6373673A (ja) | 1986-09-17 | 1986-09-17 | サ−ジ吸収用半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373673A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0622999Y2 (ja) * | 1988-08-31 | 1994-06-15 | 横河電機株式会社 | ペアツエナダイオード |
-
1986
- 1986-09-17 JP JP21835686A patent/JPS6373673A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6373673A (ja) | 1988-04-04 |
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